10.1109/IWCE.2009.5091097Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
Abstract—We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nano...
Abstract- Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbon...
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema za...
10.1109/IWCE.2009.5091098Proceedings - 2009 13th International Workshop on Computational Electronics...
2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings1127-1...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Graphene is a carbon based material that has only one atomic layer. It has exceptional electronic an...
One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive ...
10.1109/INEC.2011.5991711Proceedings - International NanoElectronics Conference, INEC
Abstract—A graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) is proposed and modeled a...
Abstract—We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nano...
Abstract- Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbon...
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema za...
10.1109/IWCE.2009.5091098Proceedings - 2009 13th International Workshop on Computational Electronics...
2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings1127-1...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Graphene is a carbon based material that has only one atomic layer. It has exceptional electronic an...
One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive ...
10.1109/INEC.2011.5991711Proceedings - International NanoElectronics Conference, INEC
Abstract—A graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) is proposed and modeled a...
Abstract—We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
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