Add to ORKGAbstract- Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbons (AGNRs) was built. The diode is composed of p-type and n-type AGNRs and bandgaps of the AGNRs are obtained by using a tight binding method. The bandgaps are required to describe a potential profile having a potential barrier of the diode. Transmittance of electrons tunneling through the potential barrier is then calculated by employing Airy wavefunctions. Gaussian quadrature method, which is a numerical approximation, is used to obtain tunnel current in the diode. All steps are visualized by using the graphical user interface of Matlab. Index Terms- Armchair graphene nanoribbon, tunnel current
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema za...
Graphene nanoribbons (GNRs) have drawn significant research interest due to its excellent electronic...
This paper presents a new approach to study the effect of carrier generation on the current of graph...
The Dirac electron tunneling current in an n-p-n bipolar transistor based on armchair graphene nanor...
One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive ...
10.1109/IWCE.2009.5091097Proceedings - 2009 13th International Workshop on Computational Electronics...
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottk...
Using first-principles quantum transport simulations, this work examines changes in the total elect...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
As CMOS feature size is reaching atomic dimensions, unjustifiable static power, reliability, and eco...
The increasing demand for small sized, low power consumption and high processing speeds have always ...
In recent years, there has been much interest in modelling graphene nanoribbons as they have great p...
One dimensional band structure limit is applied on monolayer graphene nanoribbon homo-junction. The ...
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema za...
Graphene nanoribbons (GNRs) have drawn significant research interest due to its excellent electronic...
This paper presents a new approach to study the effect of carrier generation on the current of graph...
The Dirac electron tunneling current in an n-p-n bipolar transistor based on armchair graphene nanor...
One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive ...
10.1109/IWCE.2009.5091097Proceedings - 2009 13th International Workshop on Computational Electronics...
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottk...
Using first-principles quantum transport simulations, this work examines changes in the total elect...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
Atomistic tight-binding real space and mode space models are used to investigate the key design para...
As CMOS feature size is reaching atomic dimensions, unjustifiable static power, reliability, and eco...
The increasing demand for small sized, low power consumption and high processing speeds have always ...
In recent years, there has been much interest in modelling graphene nanoribbons as they have great p...
One dimensional band structure limit is applied on monolayer graphene nanoribbon homo-junction. The ...
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema za...
Graphene nanoribbons (GNRs) have drawn significant research interest due to its excellent electronic...
This paper presents a new approach to study the effect of carrier generation on the current of graph...