In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied. © 2014 IEEE
Abstract—The memristor device technology has created waves in the research community and led to the ...
Recent advances in access-transistor-free memristive crossbars have demonstrated the potential of me...
In this paper, we present MemShuffle, an end-to-end mem-ory protection scheme that resists several a...
Abstract— Several memory vendors are pursuing different kinds of memory cells that can offer high de...
Memristor arrays are a promising memory technology that store information in a crossbar array of two...
The memristor is one among the most promising emerging technologies for enabling a new generation of...
The demands for continuous miniaturization of electronic devices and circuits have kept on increasi...
Memristor technology is becoming an attractive option for memory architectures, in-memory computing,...
The recently proposed nanoscale asynchronous crossbar architecture based on memristor-based look up ...
Memristor technology is receiving an increased attention as a potential solution to meet the scaling...
Nanotechnology is soon predicted to replace the CMOS technology, as current CMOS lithographic techni...
The memristor has been proposed as the fourth circuit element. Among the emerging nano-technologies,...
International audienceWith the arrival of crosspoint based memories on the consumer market, high-den...
Testing memristor crossbar arrays is required to ensure high quality. However, inefficient testing c...
Considering the constraints of CMOS technology progress at the nano-domain, memristor technology is ...
Abstract—The memristor device technology has created waves in the research community and led to the ...
Recent advances in access-transistor-free memristive crossbars have demonstrated the potential of me...
In this paper, we present MemShuffle, an end-to-end mem-ory protection scheme that resists several a...
Abstract— Several memory vendors are pursuing different kinds of memory cells that can offer high de...
Memristor arrays are a promising memory technology that store information in a crossbar array of two...
The memristor is one among the most promising emerging technologies for enabling a new generation of...
The demands for continuous miniaturization of electronic devices and circuits have kept on increasi...
Memristor technology is becoming an attractive option for memory architectures, in-memory computing,...
The recently proposed nanoscale asynchronous crossbar architecture based on memristor-based look up ...
Memristor technology is receiving an increased attention as a potential solution to meet the scaling...
Nanotechnology is soon predicted to replace the CMOS technology, as current CMOS lithographic techni...
The memristor has been proposed as the fourth circuit element. Among the emerging nano-technologies,...
International audienceWith the arrival of crosspoint based memories on the consumer market, high-den...
Testing memristor crossbar arrays is required to ensure high quality. However, inefficient testing c...
Considering the constraints of CMOS technology progress at the nano-domain, memristor technology is ...
Abstract—The memristor device technology has created waves in the research community and led to the ...
Recent advances in access-transistor-free memristive crossbars have demonstrated the potential of me...
In this paper, we present MemShuffle, an end-to-end mem-ory protection scheme that resists several a...