Add to ORKGTerahertz (THz) radiation from p-type (100) InAs was investigated using time domain spectroscopy. Azimuthal angle dependence measurements and the ambipolar mobility theory suggest the dominant THz radiation mechanism to be that of the surge current. © 2006 Optical Society of America
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
The azimuthal angle dependence of the terahertz (THz) radiation power of (100) p-type InAs under 1-T...
Azimuthal angle dependence of the terahertz radiation of (100) p-type InAs under 1-T field is presen...
Azimuthal angle dependence of the terahertz radiation of (100) p-type InAs under 1-T field is presen...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
The azimuthal angle dependence in the terahertz radiation power of (100) InAs under 1 T magnetic fie...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
sub i sub c sub u sub l sub a sub r = 0 centre dot 19m sub e and m sub p sub a sub r sub a sub l sub...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
Terahertz radiation is electromagnetic waves with frequencies from 0.1-10 THz. THz radiation can pas...
The THz radiation spectrum from InAs in a magnetic field irradiated with femtosecond pulses can be c...
We present the magnetic-field dependence of terahertz (THz)-radiation power from femtosecond-laser-i...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
The azimuthal angle dependence of the terahertz (THz) radiation power of (100) p-type InAs under 1-T...
Azimuthal angle dependence of the terahertz radiation of (100) p-type InAs under 1-T field is presen...
Azimuthal angle dependence of the terahertz radiation of (100) p-type InAs under 1-T field is presen...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
The azimuthal angle dependence in the terahertz radiation power of (100) InAs under 1 T magnetic fie...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
sub i sub c sub u sub l sub a sub r = 0 centre dot 19m sub e and m sub p sub a sub r sub a sub l sub...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
Terahertz radiation is electromagnetic waves with frequencies from 0.1-10 THz. THz radiation can pas...
The THz radiation spectrum from InAs in a magnetic field irradiated with femtosecond pulses can be c...
We present the magnetic-field dependence of terahertz (THz)-radiation power from femtosecond-laser-i...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...