Add to ORKGExperimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photo-carrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated b...
We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ult...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
Terahertz (THz) radiation from p-type (100) InAs was investigated using time domain spectroscopy. Az...
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are...
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement o...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
Due to a previous lack of suitable sources and detectors, terahertz (1012 Hz) frequencies have prove...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated b...
We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ult...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
Terahertz (THz) radiation from p-type (100) InAs was investigated using time domain spectroscopy. Az...
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are...
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement o...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
Due to a previous lack of suitable sources and detectors, terahertz (1012 Hz) frequencies have prove...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated b...
We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ult...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...