Add to ORKGIn the present paper, we have developed a model of a n-RADFET dosimeter device. Moreover, the study has addressed the effects of ionizing radiation on the surface potential and threshold voltage characteristics of the device. In addition, a detailed simulation analysis of the device has been conducted to obtain some further results. The study indicated that high sensitivity can be obtained for RADFET using n-MOSFET device. The results are expected to benefit in establishing the effectiveness of n-RADFET device as a dosimeter
High-frequency semiconductor devices are key components for advanced power electronic system that re...
Fraunhofer INT together with CERN calibrated different RADiation-sensitive Field-Effect Transistor (...
Nowadays, ionizing radiation detectors find application in a wide range of contexts, spanning from i...
This paper presented a study of MOSFETs as a sensor and dosimeter of ionizing radiation. The electri...
The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET...
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sens...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irr...
Accurate, quantitative measurements of ionizing radiation, commonly employed in medical diagnostic a...
This thesis mainly describes a total dose measurement technique using radiation-sensitive field effe...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
’ In the following pages, it is proposed that multiple, small radiation field effects transistors (R...
This paper reports on the processing steps in a silicon foundry leading to improved performance of t...
High-frequency semiconductor devices are key components for advanced power electronic system that re...
Fraunhofer INT together with CERN calibrated different RADiation-sensitive Field-Effect Transistor (...
Nowadays, ionizing radiation detectors find application in a wide range of contexts, spanning from i...
This paper presented a study of MOSFETs as a sensor and dosimeter of ionizing radiation. The electri...
The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET...
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sens...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irr...
Accurate, quantitative measurements of ionizing radiation, commonly employed in medical diagnostic a...
This thesis mainly describes a total dose measurement technique using radiation-sensitive field effe...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
’ In the following pages, it is proposed that multiple, small radiation field effects transistors (R...
This paper reports on the processing steps in a silicon foundry leading to improved performance of t...
High-frequency semiconductor devices are key components for advanced power electronic system that re...
Fraunhofer INT together with CERN calibrated different RADiation-sensitive Field-Effect Transistor (...
Nowadays, ionizing radiation detectors find application in a wide range of contexts, spanning from i...