Effects of induced biaxial strain on the electrical transport and magnetic properties of epitaxialthin films of SrRuO 3 and La 0.67 Sr 0.33 MnO 3 by structural transitions of ferroelectric BaTiO 3 substrates have been studied. Large jumps of electrical resistivity (∼5% in SrRuO 3 and ∼12% in La 0.67 Sr 0.33 MnO 3 ) and low field magnetization (∼70% in La 0.67 Sr 0.33 MnO 3 ) have been observed in the films at the structural transition temperatures of BaTiO 3 substrate. The hysteretic jumps are reproducible through many thermal cycles, and they can be attributed to strain effects induced by the substrate. The use of phase transitions of ferroelectric substrates to manipulate lattice strain of epitaxialthin film heterostructures can be a usef...
BaxSr1−xTiO3 is ideally suited as a tunable medium for radio frequency passive component. In this co...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
Effects of induced biaxial strain on the electrical transport and magnetic properties of epitaxialth...
To obtain the electrical properties of strained ferroelectric thin films, bottom electrodes with lat...
2019 Copyright All rights reserved. Strain is a powerful tool for tuning the magnetic, ferroelectric...
The impact of strain on structure and ferroelectric properties of epitaxial SrTiO3 films on various ...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
Strain engineering for the heteroepitaxy film is a technique to apply strain on the oxide film throu...
Effects of lattice strain on magnetic behavior of epitaxial La0.67Sr0.33MnO3 thin films grown by 90°...
The evolution of three-dimensional strain states and crystallographic domain structures of epitaxial...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
We investigated the role of strain on the magnetic properties of La0.7Sr0.3MnO3 epitaxial films grow...
BaxSr1−xTiO3 is ideally suited as a tunable medium for radio frequency passive component. In this co...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
Effects of induced biaxial strain on the electrical transport and magnetic properties of epitaxialth...
To obtain the electrical properties of strained ferroelectric thin films, bottom electrodes with lat...
2019 Copyright All rights reserved. Strain is a powerful tool for tuning the magnetic, ferroelectric...
The impact of strain on structure and ferroelectric properties of epitaxial SrTiO3 films on various ...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
Strain engineering for the heteroepitaxy film is a technique to apply strain on the oxide film throu...
Effects of lattice strain on magnetic behavior of epitaxial La0.67Sr0.33MnO3 thin films grown by 90°...
The evolution of three-dimensional strain states and crystallographic domain structures of epitaxial...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
We investigated the role of strain on the magnetic properties of La0.7Sr0.3MnO3 epitaxial films grow...
BaxSr1−xTiO3 is ideally suited as a tunable medium for radio frequency passive component. In this co...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From ...