We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O band, probed via Coulomb blockade and nonresonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wave functions, including the confinement energies, interaction energies, wave-function lengths, and g factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in t...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on ...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We present a magnetophotoluminescence study on neutral and charged excitons confined to InAs/GaAs qu...
The magnetic field dependence of the excitonic states in unstrained GaAs/AlxGa1-xAs quantum dots is ...
In this work, magneto-photoluminescence at low temperature, 4.2 K, is used to probe the exciton conf...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on ...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We present a magnetophotoluminescence study on neutral and charged excitons confined to InAs/GaAs qu...
The magnetic field dependence of the excitonic states in unstrained GaAs/AlxGa1-xAs quantum dots is ...
In this work, magneto-photoluminescence at low temperature, 4.2 K, is used to probe the exciton conf...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...