We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in ...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
We report about spatially resolved magneto-optical experiments on two different confined semiconduct...
We report about spatially resolved magneto-optical experiments on two different confined semiconduct...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on ...
We investigated the magneto-optical properties of type-II InP/GaAs quantum dots using single-dot spe...
Calculations of the electronic and optical properties of quantum dots (QD) reveal that optical absor...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
We report about spatially resolved magneto-optical experiments on two different confined semiconduct...
We report about spatially resolved magneto-optical experiments on two different confined semiconduct...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on ...
We investigated the magneto-optical properties of type-II InP/GaAs quantum dots using single-dot spe...
Calculations of the electronic and optical properties of quantum dots (QD) reveal that optical absor...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this work, we show that an electric field can be used to tune the g-factor in (In,Ga)As quantum d...
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function exte...