Ultralow-Temperature Measurements of Submicron Devices Nanometer-Scale Semiconductor Devices

Study of conduction in vertical and lateral nanostructures

Kolagunta, Venkat Ramamurthi

January 1997

It is predicted that Quantum devices would be used to develop future high-speed computers. The demon...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Quantum dipole effects in a silicon transistor under high electric fields

Saito, Shinichi
Li, Zuo
Yoshimoto, Hiroyuki
Tomita, Isao
Tsuchiya, Yoshishige
Sasago, Yoshitaka
Arimoto, Hideo
Liu, Fayong
Husain, Muhammad
Hisamoto, Digh
Rutt, Harvey
Kurihara, Sususu

Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as f...

Ultralow-Temperature Measurements of Submicron Devices

Kastner, Marc A.
Field, S.
Licini, C.
Face, D.
Meirav, U.
Scott-Thomas, John H. F.
Park, S.

January 1987

Contains research summary.Joint Services Electronics Program (Contract DAALO03-86-K-0002

Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Kastner, Marc A.
Antoniadis, Dimitri A.
Field, Stuart B.
Smith, Henry I.
Heiblum, Mordehai
Wind, Shalom
Meirav, Udi
Park, Samuel L.
Scott-Thomas, John H. F.
Odoardi, Angela R.

Contains a description on one research project.Joint Services Electronics Program DAAL03-89-C-000

Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Kastner, Marc A.
Field, Stuart B.
Meirav, Udi
Park, Samuel L.
Scott-Thomas, John H. F.

Contains report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-000...

Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers

Kastner, Marc A.

January 1986

Contains research summary.Joint Services Electronics Program (Contract DAALO3-86-K-0002

Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-mosfet of three different thicknesses and two temperature states

Farah Nadhirah

This paper presents a theoretical simulation study for electrical characteristics of double-gate (DG...

in Submicron Electronic Devices

Philip Frederick Bagwell
Philip F. Bagwell

January 1991

Electronic devices with characteristic dimensions of the order of 100 nm or less exhibit many novel ...

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Li, Zuo
Husain, Muhammad
Yoshimoto, Hiroyuki
Tani, Kazuki
Sasago, Yoshitaka
Hisamoto, Digh
Fletcher, Jonathan
Kataoka, Masaya
Tsuchiya, Yoshishige
Saito, Shinichi

May 2017

The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effe...

Local probe of electronic states in high mobility quantum Hall samples

Samani Nasab, Mohammad

January 2017

The discovery of the integer quantum Hall effect (IQHE) and the fractional quantum Hall effect (FQHE...

3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

Mohamed, Mohamed

May 2012

The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microproc...

Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

March 2020

We report measurements on submicron metal-oxide-semiconductor field effect transistors equipped with...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Study of conduction in vertical and lateral nanostructures

Kolagunta, Venkat Ramamurthi

January 1997

It is predicted that Quantum devices would be used to develop future high-speed computers. The demon...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Quantum dipole effects in a silicon transistor under high electric fields

Saito, Shinichi
Li, Zuo
Yoshimoto, Hiroyuki
Tomita, Isao
Tsuchiya, Yoshishige
Sasago, Yoshitaka
Arimoto, Hideo
Liu, Fayong
Husain, Muhammad
Hisamoto, Digh
Rutt, Harvey
Kurihara, Sususu

Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as f...

Ultralow-Temperature Measurements of Submicron Devices

Kastner, Marc A.
Field, S.
Licini, C.
Face, D.
Meirav, U.
Scott-Thomas, John H. F.
Park, S.

January 1987

Contains research summary.Joint Services Electronics Program (Contract DAALO03-86-K-0002

Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Kastner, Marc A.
Antoniadis, Dimitri A.
Field, Stuart B.
Smith, Henry I.
Heiblum, Mordehai
Wind, Shalom
Meirav, Udi
Park, Samuel L.
Scott-Thomas, John H. F.
Odoardi, Angela R.

Contains a description on one research project.Joint Services Electronics Program DAAL03-89-C-000

Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Kastner, Marc A.
Field, Stuart B.
Meirav, Udi
Park, Samuel L.
Scott-Thomas, John H. F.

Contains report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-000...

Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers

Kastner, Marc A.

January 1986

Contains research summary.Joint Services Electronics Program (Contract DAALO3-86-K-0002

Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-mosfet of three different thicknesses and two temperature states

Farah Nadhirah

This paper presents a theoretical simulation study for electrical characteristics of double-gate (DG...

in Submicron Electronic Devices

Philip Frederick Bagwell
Philip F. Bagwell

January 1991

Electronic devices with characteristic dimensions of the order of 100 nm or less exhibit many novel ...

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Li, Zuo
Husain, Muhammad
Yoshimoto, Hiroyuki
Tani, Kazuki
Sasago, Yoshitaka
Hisamoto, Digh
Fletcher, Jonathan
Kataoka, Masaya
Tsuchiya, Yoshishige
Saito, Shinichi

May 2017

The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effe...

Local probe of electronic states in high mobility quantum Hall samples

Samani Nasab, Mohammad

January 2017

The discovery of the integer quantum Hall effect (IQHE) and the fractional quantum Hall effect (FQHE...

3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

Mohamed, Mohamed

May 2012

The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microproc...

Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

March 2020

We report measurements on submicron metal-oxide-semiconductor field effect transistors equipped with...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Study of conduction in vertical and lateral nanostructures

Kolagunta, Venkat Ramamurthi

January 1997

It is predicted that Quantum devices would be used to develop future high-speed computers. The demon...

Scanning tunneling potentiometry at nanoscale defects in thin films

Lüpke, Felix

January 2018

The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...

Quantum dipole effects in a silicon transistor under high electric fields

Saito, Shinichi
Li, Zuo
Yoshimoto, Hiroyuki
Tomita, Isao
Tsuchiya, Yoshishige
Sasago, Yoshitaka
Arimoto, Hideo
Liu, Fayong
Husain, Muhammad
Hisamoto, Digh
Rutt, Harvey
Kurihara, Sususu

Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as f...

Ultralow-Temperature Measurements of Submicron Devices Nanometer-Scale Semiconductor Devices

Abstract

Extracted data

Ultralow-Temperature Measurements of Submicron Devices Nanometer-Scale Semiconductor Devices

Abstract

Extracted data

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