Add to ORKGThe description of the original integrated approach to solving the problem of statistical analysis in microelectronic products design process from the design of the technological routine to the system design. Testing of this methodology is described by investigating the influence of process parameters on dispersion structural and electrical characteristics of 0.35 micron MOS transistor, and the characteristics of the analog and digital circuit solutions
Abstract:- In the design and optimization phase of analog integrated circuit conception, a topology ...
A general strategy for direct extraction of MOS transistor DC parameters using only a small number o...
Complementary metal oxide semiconductor (CMOS) is the most widely used discrete structure in the sem...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
Algorithm of determination of physical parameters of a transistor structure for obtaining a specifie...
Methodology and results of statistical analysis and optimization in the joined process/device/circu...
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and ro...
A practical approach of extracting MOS device BSIM3 model parameters to represent process variations...
A new design methodology based on a unified treatment of all the regions of operation of the MOS tra...
In the manufacturing of VLSI circuits, engineering designs should take into consideration random var...
An accurate and robust method of extracting the threshold voltage, the series resistance and the eff...
A new design methodology based on a unified treatment of all the regions of operation of the MOS tra...
This paper presents a systematic approach for analyzing MOSFET integrated circuit performance as fun...
Abstract:- In the design and optimization phase of analog integrated circuit conception, a topology ...
A general strategy for direct extraction of MOS transistor DC parameters using only a small number o...
Complementary metal oxide semiconductor (CMOS) is the most widely used discrete structure in the sem...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
Algorithm of determination of physical parameters of a transistor structure for obtaining a specifie...
Methodology and results of statistical analysis and optimization in the joined process/device/circu...
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and ro...
A practical approach of extracting MOS device BSIM3 model parameters to represent process variations...
A new design methodology based on a unified treatment of all the regions of operation of the MOS tra...
In the manufacturing of VLSI circuits, engineering designs should take into consideration random var...
An accurate and robust method of extracting the threshold voltage, the series resistance and the eff...
A new design methodology based on a unified treatment of all the regions of operation of the MOS tra...
This paper presents a systematic approach for analyzing MOSFET integrated circuit performance as fun...
Abstract:- In the design and optimization phase of analog integrated circuit conception, a topology ...
A general strategy for direct extraction of MOS transistor DC parameters using only a small number o...
Complementary metal oxide semiconductor (CMOS) is the most widely used discrete structure in the sem...