This paper presents a systematic approach for analyzing MOSFET integrated circuit performance as functions of MOSFET channel length and channel width variations. The methodology, which involves an algorithm based on the Tellegen\u27s theorem and a database that contains the statistical information of MOSFET process parameters, is implemented in SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier Is included to illustrate the usefulness of the method. © 1989 IEEE
In discrete electronics, the statistical variability of device parameters is seldom given in datashe...
A new method is presented to extract the threshold voltage of MOSFET\u27s, It is developed based on ...
An accurate and robust method of extracting the threshold voltage, the series resistance and the eff...
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit ar...
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit ar...
Abstract:- In the design and optimization phase of analog integrated circuit conception, a topology ...
We have developed a novel and effective method for predicting the distribution of MOSFET device char...
A practical and efficient approach for estimating the MOSFET device and circuit performance distribu...
A practical and efficient approach for estimating the MOSFET device and circuit performance distribu...
This paper describes the first application of Taguchi SDOE to the sensitivity analysis of a MMIC amp...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and ro...
In this paper, we present an extensive analysis of the performance degradation in MOSFET based circu...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
Many methods for the statistical design and analysis of integrated circuits have been proposed over ...
In discrete electronics, the statistical variability of device parameters is seldom given in datashe...
A new method is presented to extract the threshold voltage of MOSFET\u27s, It is developed based on ...
An accurate and robust method of extracting the threshold voltage, the series resistance and the eff...
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit ar...
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit ar...
Abstract:- In the design and optimization phase of analog integrated circuit conception, a topology ...
We have developed a novel and effective method for predicting the distribution of MOSFET device char...
A practical and efficient approach for estimating the MOSFET device and circuit performance distribu...
A practical and efficient approach for estimating the MOSFET device and circuit performance distribu...
This paper describes the first application of Taguchi SDOE to the sensitivity analysis of a MMIC amp...
This paper proposes an empirical MOSFET model, supported by statistically significant data derived f...
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and ro...
In this paper, we present an extensive analysis of the performance degradation in MOSFET based circu...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
Many methods for the statistical design and analysis of integrated circuits have been proposed over ...
In discrete electronics, the statistical variability of device parameters is seldom given in datashe...
A new method is presented to extract the threshold voltage of MOSFET\u27s, It is developed based on ...
An accurate and robust method of extracting the threshold voltage, the series resistance and the eff...