Add to ORKGThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.Includes bibliographical references (p. 108-111).by Benjamin A. Tao.M.S
Perfluorocompounds commonly used by the microelectronics industry are considered potent global warmi...
A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...
Low dielectric constant materials (low-k) are used as interlevel dielectrics in integrated circuits...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substit...
Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was p...
Abstract: Conventional developments were conducted in a very empirical way, such as a trial and erro...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
A basic requirement of a plasma etching process is fidelity of the patterned organic materials. In p...
(invited paper)Degradation of porous low dielectric constant materials during their exposure in etch...
Perfluorocompounds commonly used by the microelectronics industry are considered potent global warmi...
A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...
Low dielectric constant materials (low-k) are used as interlevel dielectrics in integrated circuits...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substit...
Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was p...
Abstract: Conventional developments were conducted in a very empirical way, such as a trial and erro...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
A basic requirement of a plasma etching process is fidelity of the patterned organic materials. In p...
(invited paper)Degradation of porous low dielectric constant materials during their exposure in etch...
Perfluorocompounds commonly used by the microelectronics industry are considered potent global warmi...
A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...
Low dielectric constant materials (low-k) are used as interlevel dielectrics in integrated circuits...