Add to ORKGA plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)
The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...
Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was p...
Plasma etching processes are widely used to produce patterns in the fabrication of microelectronic d...
A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
The etching of SiO2 films on a Si substrate in an rf plasma in CF4 has been studied with i n s i t u...
An expanding cascaded arc is used as a fluorine atom source for fast etching of silicon. Extremely h...
International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.Includes...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
In semiconductor production, the wafers should be processed in different chambers which are readily ...
The selective etching process is widely used for achieving the desired etch rate in semiconductor fa...
The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...
Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was p...
Plasma etching processes are widely used to produce patterns in the fabrication of microelectronic d...
A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
The etching of SiO2 films on a Si substrate in an rf plasma in CF4 has been studied with i n s i t u...
An expanding cascaded arc is used as a fluorine atom source for fast etching of silicon. Extremely h...
International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.Includes...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
In semiconductor production, the wafers should be processed in different chambers which are readily ...
The selective etching process is widely used for achieving the desired etch rate in semiconductor fa...
The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...
Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was p...
Plasma etching processes are widely used to produce patterns in the fabrication of microelectronic d...