Growth and Characterization of 1.3μm Multi-Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers
- Sellers, I. R.
- Liu, H.Y.
- Mowbray, D.J.
- Badcock, T.J.
- Groom, K.M.
- Hopkinson, M.
- Gutiérrez, M.
- Skolnic, M.S.
- Beanland, R.
- Childs, D.T.
- Robbins, D.J.
DOIAbstract
The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi‐layer quantum dot lasers by preventing the formation of threading dislocations. As‐cleaved devices exhibit a cw room temperature (300K) threshold current density (Jth ) of 39 Acm−2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw Jth of 17 Acm−2
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