High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
- Liu, H.Y.
- Childs, D.T.
- Badcock, T.J.
- Groom, K.M.
- Sellers, I.R.
- Hopkinson, M.
- Hogg, R.A.
- Robbins, D.J.
- Mowbray, D.J.
- Skolnick, M.S.
Publication date
June 2005
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
1041-1135Abstract
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets
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