Work presented here has been centered around the growth of epitaxial graphene via the thermal decomposition of 4H silicon carbide wafers. Improvements to ultra high vacuum growth procedures used within the research group have been made via the optimization of annealing times and temperatures. The optimization involved the use of surface science techniques such as low energy electron diffraction, atomic force microscopy, low energy electron microscopy and Raman spectroscopy amongst others to monitor changes in surface reconstructions, lateral grain sizes of graphene domains and graphene coverage on the surface as the growth parameters were varied. Improvements observed via the surface science techniques such as increasing the lateral domain ...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Graphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandga...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon...
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the p...
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the p...
Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Graphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandga...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon...
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the p...
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the p...
Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has receiv...
Graphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandga...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...