Work presented here has been centered around the growth of epitaxial graphene via the thermal decomposition of 4H silicon carbide wafers. Improvements to ultra high vacuum growth procedures used within the research group have been made via the optimization of annealing times and temperatures. The optimization involved the use of surface science techniques such as low energy electron diffraction, atomic force microscopy, low energy electron microscopy and Raman spectroscopy amongst others to monitor changes in surface reconstructions, lateral grain sizes of graphene domains and graphene coverage on the surface as the growth parameters were varied. Improvements observed via the surface science techniques such as increasing the lateral dom...
The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, ...
International audienceSince 2008, epitaxial graphene growth has been developed in terms of homogenei...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
The creation of graphene through the thermal decomposition of silicon carbide is explored. Four broa...
Growing macroscopic graphene films with the aim of making graphene commerically viable is being resea...
Thanks to its superior electron and hole mobilities, graphene has been considered to be a promising ...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In the past decade, fundamental graphene research has indicated several excellent electronic propert...
This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atom...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
This report describes formation and evaluation techniques of high-quality graphene on silicon carbid...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
It was found that high quality epitaxial graphene (EG) films can be grown on hexagonal SiC surface a...
The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, ...
International audienceSince 2008, epitaxial graphene growth has been developed in terms of homogenei...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomp...
The creation of graphene through the thermal decomposition of silicon carbide is explored. Four broa...
Growing macroscopic graphene films with the aim of making graphene commerically viable is being resea...
Thanks to its superior electron and hole mobilities, graphene has been considered to be a promising ...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
In the past decade, fundamental graphene research has indicated several excellent electronic propert...
This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atom...
In this thesis single-crystal 4H silicon carbide is decomposed by annealing in ultra-high vacuum con...
This report describes formation and evaluation techniques of high-quality graphene on silicon carbid...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
It was found that high quality epitaxial graphene (EG) films can be grown on hexagonal SiC surface a...
The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, ...
International audienceSince 2008, epitaxial graphene growth has been developed in terms of homogenei...
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academ...