On a femtosecond timescale, we observe how Coulomb screening and collective scattering build up in an extreme nonequilibrium electron–hole plasma photoinjected in GaAs. To this end, we generate a plasma within 10 fs and probe the subsequent polarization response of the system with uncertainty-limited temporal resolution via ultrabroadband THz spectroscopy. We show that the intrinsic material becomes conductive instantaneously upon carrier injection, whereas collective effects such as Coulomb screening and plasmon scattering exhibit a delayed onset. Thus, the ultrafast formation of dressed quasiparticles is directly monitored for the first time. The timescale for these phenomena is of the order of the inverse plasma frequency. Our findings s...
The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
On a femtosecond timescale, we observe how Coulomb screening and collective scattering build up in a...
On a femtosecond timescale, we observe how Coulomb screening and collective scattering build up in a...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple l...
Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple l...
We couple 1D pulse propagation simulations with laser-solid dynamics in a GaAs quantum wire, solving...
Confinement of carriers in nanostructures entails strong modifications of their physical properties,...
Confinement of carriers in nanostructures entails strong modifications of their physical properties,...
We calculate the terahertz-frequency dependence of the transient linear conductivity σ(t,ω) of elect...
We calculate the terahertz-frequency dependence of the transient linear conductivity σ(t,ω) of elect...
The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
On a femtosecond timescale, we observe how Coulomb screening and collective scattering build up in a...
On a femtosecond timescale, we observe how Coulomb screening and collective scattering build up in a...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
In a non-equilibrium electron–hole plasma photoexcited in GaAs within 10 fs, we observe how a plasmo...
Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple l...
Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple l...
We couple 1D pulse propagation simulations with laser-solid dynamics in a GaAs quantum wire, solving...
Confinement of carriers in nanostructures entails strong modifications of their physical properties,...
Confinement of carriers in nanostructures entails strong modifications of their physical properties,...
We calculate the terahertz-frequency dependence of the transient linear conductivity σ(t,ω) of elect...
We calculate the terahertz-frequency dependence of the transient linear conductivity σ(t,ω) of elect...
The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...