Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach

A model for thermal dispersive effects due to self-heating in electron devices at different “case” temperatures is here presented. The model is based on an equivalent voltage approach, which has already been used for taking into account dispersive effects due to charge trapping phenomena in FETs. According to this approach a virtual non-dispersive associated device controlled by equivalent port voltages is defined, in such a way to be compatible with modelling based on standard non-linear dynamic approaches. The equivalent-voltage description of dispersive effects can be identified on the basis of conventional measurements carried out under static and low-frequency small-signal operating conditions and takes into account both charge trapping effects in FETs and self-heating in a comprehensive way. A preliminary experimental validation of the proposed approach is presented