none4An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real heterojunction bipolar transistor device.mixedI. Melczarsky; J. A. Lonac; F. Filicori; A. Santa...
A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling acti...
A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate ...
Accurate transistor models are important in wireless and microwave circuit design. Large-signal fiel...
none6Theoretical and practical issues concerning the non-linear dynamic modelling of electron device...
It is well known that low-frequency dispersive effects cause important deviations between static (dc...
The paper discusses a general approach to the electrothermal simulation of nonlinear FET circuits. T...
This paper presents a new modeling approach accounting for the nonlinear description of low-frequenc...
A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power trans...
Specific pulsed measurement techniques are presented to discriminate thermal and trapping effects du...
We present a general approach to concurrently describe small-change variations of a semiconductor de...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
A model for thermal dispersive effects due to self-heating in electron devices at different “case” t...
A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling acti...
A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is propo...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling acti...
A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate ...
Accurate transistor models are important in wireless and microwave circuit design. Large-signal fiel...
none6Theoretical and practical issues concerning the non-linear dynamic modelling of electron device...
It is well known that low-frequency dispersive effects cause important deviations between static (dc...
The paper discusses a general approach to the electrothermal simulation of nonlinear FET circuits. T...
This paper presents a new modeling approach accounting for the nonlinear description of low-frequenc...
A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power trans...
Specific pulsed measurement techniques are presented to discriminate thermal and trapping effects du...
We present a general approach to concurrently describe small-change variations of a semiconductor de...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
A model for thermal dispersive effects due to self-heating in electron devices at different “case” t...
A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling acti...
A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is propo...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling acti...
A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate ...
Accurate transistor models are important in wireless and microwave circuit design. Large-signal fiel...