This chapter is from the book Semiconductors and Semimetals: Imperfections in III/V Materials, which covers a range of topics from theory to materials issues, provides fundamental knowledge concerning imperfections in III/V compounds, and demonstrates the relevance of specific results for device performance and applications. The text examines microscopic models of structural and electronic defects in bulk and epitaxial III/V compounds. It provides an analysis of electronic properties in III/V compounds and discusses the influence of III/V compounds on device performance. The book should be of interest to students and researchers in materials science, electrical engineering, solid-state and device-oriented physics, surface science, and resea...
Using electronic structure calculations, we systematically investigate the formation of vacancies in...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
The effects of external and internal strains, and of defect charges on the formation of vacancies an...
This chapter is from the book Semiconductors and Semimetals: Imperfections in III/V Materials, which...
This chapter is from the book Semiconductors and Semimetals: Imperfections in III/V Materials, which...
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconduct...
This text surveys the theory of defects in solids, concentrating on the electronic structure of poin...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals h...
The technologically useful properties of a solid often depend upon the types and concentrations of t...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Using electronic structure calculations, we systematically investigate the formation of vacancies in...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
The effects of external and internal strains, and of defect charges on the formation of vacancies an...
This chapter is from the book Semiconductors and Semimetals: Imperfections in III/V Materials, which...
This chapter is from the book Semiconductors and Semimetals: Imperfections in III/V Materials, which...
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconduct...
This text surveys the theory of defects in solids, concentrating on the electronic structure of poin...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals h...
The technologically useful properties of a solid often depend upon the types and concentrations of t...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
Using electronic structure calculations, we systematically investigate the formation of vacancies in...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
The effects of external and internal strains, and of defect charges on the formation of vacancies an...