Add to ORKGAbsorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been stud...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been stud...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperat...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been stud...