Hyperdoped silicon is a promising material for infrared detection via intermediate band absorption. In this work, enhancement of IR absorption of hyperdoped silicon is demonstrated and methods for fabrication of Ohmic contacts are explored
Irradiating a plane silicon surface with a train of intense femtosecond-laser pulses in a sulfur-con...
According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cel...
DoctorNear-Infrared (700-1,600 nm) applications are an essential technology that is widely used thro...
Silicon photonics requires the realization of CMOS-compatible infrared detectors for large scale int...
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising pho...
Following recent successful demonstrations of enhanced infrared absorption in Au-hyperdoped Si, ther...
Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-...
Backside failure analysis techniques rely heavily on transmission of near infrared (IR) radiation th...
Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunication...
Silicon doped with gold at supersaturated concentrations is promising for infrared photodetectors an...
Hyperdoping of Si with deep-level impurities has attracted renewed interest for its unique physical ...
Silicon is the dominant material in the semiconductor industry, massively used in transistors, recti...
Abstract. Silicon oxide and hydrogen are ubiquitous in materials and processing issues in microelect...
With support from this award we studied a novel silicon microtexturing process and its application i...
Besides being the foundational material for microelectronics, crystalline silicon has long been used...
Irradiating a plane silicon surface with a train of intense femtosecond-laser pulses in a sulfur-con...
According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cel...
DoctorNear-Infrared (700-1,600 nm) applications are an essential technology that is widely used thro...
Silicon photonics requires the realization of CMOS-compatible infrared detectors for large scale int...
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising pho...
Following recent successful demonstrations of enhanced infrared absorption in Au-hyperdoped Si, ther...
Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-...
Backside failure analysis techniques rely heavily on transmission of near infrared (IR) radiation th...
Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunication...
Silicon doped with gold at supersaturated concentrations is promising for infrared photodetectors an...
Hyperdoping of Si with deep-level impurities has attracted renewed interest for its unique physical ...
Silicon is the dominant material in the semiconductor industry, massively used in transistors, recti...
Abstract. Silicon oxide and hydrogen are ubiquitous in materials and processing issues in microelect...
With support from this award we studied a novel silicon microtexturing process and its application i...
Besides being the foundational material for microelectronics, crystalline silicon has long been used...
Irradiating a plane silicon surface with a train of intense femtosecond-laser pulses in a sulfur-con...
According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cel...
DoctorNear-Infrared (700-1,600 nm) applications are an essential technology that is widely used thro...
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