Numerical simulations for high efficiency HIT solar cells using microcrystalline silicon as emitter and back surface field (BSF) layers

In present article the influence of thickness and band gap of microcrystalline silicon emitter layer, amorphous silicon front and back intrinsic layers and p-type crystalline silicon (c-Si) wafer thickness on the performance of TCO/mu c-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/mu c-Si:H(p(+))/Ag Heterojunction with thin intrinsic layer (HIT) solar cell along with other structural possibilities were investigated through computer simulations using AFORS-HET software. These simulations revealed the importance of inclusion of intrinsic a-Si:H thin layer in improving the performance of solar cell with the help of interface passivation. Also microcrystalline BSF can raise the conversion efficiency more than 4% compared to HIT solar cell having no BSF layer. Highest stable efficiency of 24.12% for p-type substrate based HITBSF (HIT with back surface field) solar cells was observed. Furthermore the effect of textured transparent conductive oxide (TCO) on solar cells was investigated where the enhanced light trapping was observed with the use of textured TCO surface which raised the performance of solar cells. These optimizations may help in fabricating pc-Si emitter and BSF based HIT solar cells with stable efficiencies compared to possibly degraded efficiencies as in case of a-Si:H based HIT solar cell structures studied so far