Add to ORKGA Metal Oxide Nitride Oxide Semiconductor (MONOS) Asymmetric Double Gate (ADG) Nonvolatile Memory (NVM) cell is proposed. In addition to the improved scalability of the NVM cell made possible by the double-gate structure, the 2 conducting channels also provide a 2-bit per cell storage mechanism. The scalability of the device down to 50nm is demonstrated by numerical simulation. The operation mechanisms including read, program and erase in an array structure are also studied and described in this paper
Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cell...
In the post Moore era, post-complementary metal–oxide–semiconductor (CMOS) technologie...
Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we...
A novel 2-bit/cell nonvolatile memory (NVM) with metal-oxide-nitride-oxide-semiconductor (MONOS) asy...
A multi-bits/cell double gate oxide-nitride-oxide nonvolatile memory is proposed and demonstrated by...
With the growth of the multi-media applications in portable electronic products, the demand of ultra...
A highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitri...
A highly scalable 2-bit nonvolatile memory (NVM) cell using two electrically isolated charge trappin...
An opposite side floating gate FLASH memory cell structure based on double-gate metal oxide semicond...
Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a sepa...
Novel NAND silicon-oxide-nitride-oxide-silicon (SONOS) flash memories with a, pair of double gate (D...
Future semiconductor memories must increase its memory capacity while increasing operation speed and...
Abstract—The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatil...
In this paper, a Flash memory structure with the floating-gate at the opposite side of conduction ch...
Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process ...
Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cell...
In the post Moore era, post-complementary metal–oxide–semiconductor (CMOS) technologie...
Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we...
A novel 2-bit/cell nonvolatile memory (NVM) with metal-oxide-nitride-oxide-semiconductor (MONOS) asy...
A multi-bits/cell double gate oxide-nitride-oxide nonvolatile memory is proposed and demonstrated by...
With the growth of the multi-media applications in portable electronic products, the demand of ultra...
A highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitri...
A highly scalable 2-bit nonvolatile memory (NVM) cell using two electrically isolated charge trappin...
An opposite side floating gate FLASH memory cell structure based on double-gate metal oxide semicond...
Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a sepa...
Novel NAND silicon-oxide-nitride-oxide-silicon (SONOS) flash memories with a, pair of double gate (D...
Future semiconductor memories must increase its memory capacity while increasing operation speed and...
Abstract—The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatil...
In this paper, a Flash memory structure with the floating-gate at the opposite side of conduction ch...
Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process ...
Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cell...
In the post Moore era, post-complementary metal–oxide–semiconductor (CMOS) technologie...
Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we...