In this work, the dispersion mechanisms affecting the electric transport in CuIn1?xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1?xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range
AbstractWhen Cu(In,Ga)(S,Se)2 is prepared by heating metal precursor films in chalcogen atmosphere (...
When Cu In,Ga S,Se 2 is prepared by heating metal precursor films in chalcogen atmosphere sequenti...
In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline ...
In this work, the dispersion mechanisms affecting the electric transport in CuIn1?xGaxSe2 (CIGS) thi...
CuIn1-xGaxSe2 (CIGS) thin films were grown by co-evaporation using two sources for the metal elemen...
Hall and conductivity measurements have been performed on epitaxial and polycrystalline CuGaSe2 film...
The resistance of chalcogenide glass GexAsySe1-x-y film is difficult to be observed due to the elect...
This paper concerns the study of thin films of CuXY$_2$ (X = Ga, In; Y = Se, Te) photovoltaic mater...
Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The...
Thin film samples of Cu(In,Ga)Se2 (CIGS) were prepared at room temperature by physical vapor deposit...
Cathodoluminescence CL has been measured at 10 K in cross section and plan view configuration on C...
Filamentary samples were cut from ingots of the chalcopynte semiconductor CuIn1-x,GaxSe2, grown by a...
Abstract: Cu(In1-x,Gax)Se2 thin films have been considered as an effective absorber material for hi...
Indirect synthesis via a copper free precursor film leads to superior transport properties but also ...
CuGaSe2, briefly CGS, belongs to the I-III-VI2 group of chalcopyrite compounds. CGS attracted attent...
AbstractWhen Cu(In,Ga)(S,Se)2 is prepared by heating metal precursor films in chalcogen atmosphere (...
When Cu In,Ga S,Se 2 is prepared by heating metal precursor films in chalcogen atmosphere sequenti...
In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline ...
In this work, the dispersion mechanisms affecting the electric transport in CuIn1?xGaxSe2 (CIGS) thi...
CuIn1-xGaxSe2 (CIGS) thin films were grown by co-evaporation using two sources for the metal elemen...
Hall and conductivity measurements have been performed on epitaxial and polycrystalline CuGaSe2 film...
The resistance of chalcogenide glass GexAsySe1-x-y film is difficult to be observed due to the elect...
This paper concerns the study of thin films of CuXY$_2$ (X = Ga, In; Y = Se, Te) photovoltaic mater...
Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The...
Thin film samples of Cu(In,Ga)Se2 (CIGS) were prepared at room temperature by physical vapor deposit...
Cathodoluminescence CL has been measured at 10 K in cross section and plan view configuration on C...
Filamentary samples were cut from ingots of the chalcopynte semiconductor CuIn1-x,GaxSe2, grown by a...
Abstract: Cu(In1-x,Gax)Se2 thin films have been considered as an effective absorber material for hi...
Indirect synthesis via a copper free precursor film leads to superior transport properties but also ...
CuGaSe2, briefly CGS, belongs to the I-III-VI2 group of chalcopyrite compounds. CGS attracted attent...
AbstractWhen Cu(In,Ga)(S,Se)2 is prepared by heating metal precursor films in chalcogen atmosphere (...
When Cu In,Ga S,Se 2 is prepared by heating metal precursor films in chalcogen atmosphere sequenti...
In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline ...