International audienceIn this study, we demonstrate that, beyond the standard magnon excitations, the electron-electron interactions in presence of disorder in CoFeB electrodes play a significant role on the zero-bias anomaly measured in CoFeB/MgO/CoFeB junctions. The low-temperature dependence of the tunneling conductance presents cusp-like dip at low voltage varying as the square root of the bias voltage. The amplitude of this zero-bias anomaly decreases with the annealing temperature, indicating interface crystallization and related increase in the tunnel magnetoresistance
Schmalhorst J-M, Thomas A, Kaemmerer S, et al. Transport properties of magnetic tunnel junctions wit...
The competition between the interface crystallization and diffusion processes, their influence on th...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...
International audienceIn this study, we demonstrate that, beyond the standard magnon excitations, th...
The I−V characteristics of CoFeB/MgO/CoFeB magnetic tunnel junctions show pronounced nonlinearities ...
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switch...
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junction...
Large zero-bias resistance anomalies as well as an extremely strong decrease of magnetoresistance we...
First-principles calculations of the atomic and electronic structure of crystalline CoFeB/MgO/CoFeB ...
Schmalhorst J-M, Thomas A, Reiss G, Kou X, Arenholz E. Influence of chemical and magnetic interface ...
Khan AA, Schmalhorst J-M, Reiss G, et al. Elastic and inelastic conductance in Co-Fe-B/MgO/Co-Fe-B m...
Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tu...
We provide conclusive experimental evidence that zero-bias anomaly in the differential resistance of...
The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by m...
Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tu...
Schmalhorst J-M, Thomas A, Kaemmerer S, et al. Transport properties of magnetic tunnel junctions wit...
The competition between the interface crystallization and diffusion processes, their influence on th...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...
International audienceIn this study, we demonstrate that, beyond the standard magnon excitations, th...
The I−V characteristics of CoFeB/MgO/CoFeB magnetic tunnel junctions show pronounced nonlinearities ...
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switch...
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junction...
Large zero-bias resistance anomalies as well as an extremely strong decrease of magnetoresistance we...
First-principles calculations of the atomic and electronic structure of crystalline CoFeB/MgO/CoFeB ...
Schmalhorst J-M, Thomas A, Reiss G, Kou X, Arenholz E. Influence of chemical and magnetic interface ...
Khan AA, Schmalhorst J-M, Reiss G, et al. Elastic and inelastic conductance in Co-Fe-B/MgO/Co-Fe-B m...
Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tu...
We provide conclusive experimental evidence that zero-bias anomaly in the differential resistance of...
The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by m...
Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tu...
Schmalhorst J-M, Thomas A, Kaemmerer S, et al. Transport properties of magnetic tunnel junctions wit...
The competition between the interface crystallization and diffusion processes, their influence on th...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...