Silicon nanomembranes with hybrid crystal orientations and strain states

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQMethods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.9484237242382FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ2016/14001-7423962/2016-7This research was primarily supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Award #DEFG02-03ER46028. We acknowledge the use of facilities and instrumentation supported by the NSF through the University of Wisconsin Materials Research Science and Engineering Center, DMR-1121288. Fellowship support was provided by NZ-FRST (S.A.S.), the NDSEG (D.P.), and the NSF (D.P.). The work of C.D. was supported by FAPESP (Processo 2016/14001-7) and CNPq (Processo 423962/2016-7). C. D. and A.M. acknowledge beamtime at the Brazil LNLS. The authors declare no competing financial interest