A RF Graphene FET Large-Signal Compact Model Compatible with Circuit Simulators

Graphene, a one-dimensional array of carbon atoms, is a unique material which has yet to be fully utilized. It is being investigated for its applications in the digital, analog, and high frequency (RF) domains. While it lacks a natural bandgap, rendering it unsuitable for digital circuitry without additional modification of electrical characteristics, graphene is applicable to a wide spectrum of RF applications ranging from communications platforms to flexible electronics. Specifically, its use in building RF field-effect transistors (FETs) can lead to better performance metrics, higher bandwidths, and faster data transmission rates. Graphene FETs (GFETs) are attractive because the graphene channel can be grown over large-area surfaces, and the devices typically exhibit high electron and hole mobilities and high achievable current densities [1]. In order to bridge the gap between device simulation and circuit design, a closed-form large-signal compact model compatible with commercially available circuit simulators is desired. The primary investigation of this study is to develop such a model and to evaluate its accuracy with measured and simulated data