A new series of excitation spectrum occurs in Si(B) subjected to a slow neutron irradiation and a partial high temperature anneal. The neutron irradiation produces P by the transmutation of $\sp{30}$Si and radiation damage due to the transmutation process itself as well as the unavoidable fast neutron component of the neutron flux. The spacings and the relative intensities of the lines in the new spectrum are strikingly similar to the excitation spectrum of boron acceptors in Si but with lower energies. The new series corresponds to an acceptor (referred to as B$\sb{\rm NTD})$ with a binding energy E$\sb{\rm I}$(B$\sb{\rm NTD})$ = 28.24 meV, significantly lower than E$\sb{\rm I}$(B) = 45.70 meV. The concentration of these ultrashallow accep...
Deep-Level Transient Spectroscopy (DLTS) has been used to investigate the defects in high-resistivit...
We show that the low temperature observation of the near IR absorption bands at 3.3-3.6 μm in irradi...
In boron doped silicon, optical excitation of bound holes from the ground state to the various excit...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
In this work is considered the peculiarities of carrier scattering in silicon irradiated with fast e...
In this work is considered the peculiarities of carrier scattering in silicon irradiated with fast e...
There is great interest in the effects of high energy nucleon irradiation matter. In particular, the...
The electronic excitation spectrum of phosphorus donors in silicon generated by neutron transmutatio...
Damage produced in n-type silicon by neutron ir-radiation at room temperature was studied by deep-le...
The absorption spectra of such impurities as oxygen, carbon and nitrogen are studied in the silicon ...
Producción CientíficaIntermediate-band semiconductors have attracted much attention for use in silic...
A neutron diffraction and Mössbauer spectral study of Y2Fe14-xSixB shows that silicon preferentially...
Fourier transform infrared spectroscopy, employed to investigate the electronic and vibrational exci...
At low temperatures, amorphous and partly disordered solids exhibit properties which are different f...
A novel approach to create radioactive, substitutional and interstitial **5**7Fe atoms in silicon at...
Deep-Level Transient Spectroscopy (DLTS) has been used to investigate the defects in high-resistivit...
We show that the low temperature observation of the near IR absorption bands at 3.3-3.6 μm in irradi...
In boron doped silicon, optical excitation of bound holes from the ground state to the various excit...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
In this work is considered the peculiarities of carrier scattering in silicon irradiated with fast e...
In this work is considered the peculiarities of carrier scattering in silicon irradiated with fast e...
There is great interest in the effects of high energy nucleon irradiation matter. In particular, the...
The electronic excitation spectrum of phosphorus donors in silicon generated by neutron transmutatio...
Damage produced in n-type silicon by neutron ir-radiation at room temperature was studied by deep-le...
The absorption spectra of such impurities as oxygen, carbon and nitrogen are studied in the silicon ...
Producción CientíficaIntermediate-band semiconductors have attracted much attention for use in silic...
A neutron diffraction and Mössbauer spectral study of Y2Fe14-xSixB shows that silicon preferentially...
Fourier transform infrared spectroscopy, employed to investigate the electronic and vibrational exci...
At low temperatures, amorphous and partly disordered solids exhibit properties which are different f...
A novel approach to create radioactive, substitutional and interstitial **5**7Fe atoms in silicon at...
Deep-Level Transient Spectroscopy (DLTS) has been used to investigate the defects in high-resistivit...
We show that the low temperature observation of the near IR absorption bands at 3.3-3.6 μm in irradi...
In boron doped silicon, optical excitation of bound holes from the ground state to the various excit...