A high resolution study of the excitation spectrum of phosphorus donors introduced in silicon by neutron transmutation

The electronic excitation spectrum of phosphorus donors in silicon generated by neutron transmutation has been observed. High resolution of a Fourier Transform spectrometer combined with "strain free" mounting technique revealed line widths much narrower than reported earlier. The line widths and shapes as affected by the presence of charged defects produced by the neutron irradiation were studied. An explanation for the observed line width and shape is proposed