Time‐resolved x‐ray scattering studies of epitaxial overlayers are presented. The results illustrate the usefulness of high‐brightness synchrotron probes for studying the cooperative kinetics of interfaces during rapid thermal processing.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70481/2/RSINAK-63-1-704-1.pd
Many of the challenges in X-ray diffraction arise from the requirement to produce detailed informati...
The application of advanced X-ray techniques, using both laboratory and synchrotron radiation source...
The performance of X-ray imaging detectors based on epitaxial Ge-crystal arrays grown on patterned S...
This dissertation presents the results of high resolution x-ray scattering methods for characterizin...
One of the most important issues in thin-film heterostructures is the nature of the interfaces. In g...
The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive c...
Semiconductor devices can be fabricated by growing III-V heteroepitaxial layers which are coherently...
The combination of these techniques is a strong issue for the construction and development of future...
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for s...
X-ray diffraction has been used to determine the structure of surfaces over the past decade or so. T...
In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation ro...
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in m...
The initial strain relaxation of Ge on Si(001) has been investigated during epitaxial growth modifie...
Research work on the general problem of the nature and thermal stability of the Si/Ge semiconductor ...
Ultrafast high energy electron diffraction in reflection geometry is employed to study the structura...
Many of the challenges in X-ray diffraction arise from the requirement to produce detailed informati...
The application of advanced X-ray techniques, using both laboratory and synchrotron radiation source...
The performance of X-ray imaging detectors based on epitaxial Ge-crystal arrays grown on patterned S...
This dissertation presents the results of high resolution x-ray scattering methods for characterizin...
One of the most important issues in thin-film heterostructures is the nature of the interfaces. In g...
The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive c...
Semiconductor devices can be fabricated by growing III-V heteroepitaxial layers which are coherently...
The combination of these techniques is a strong issue for the construction and development of future...
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for s...
X-ray diffraction has been used to determine the structure of surfaces over the past decade or so. T...
In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation ro...
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in m...
The initial strain relaxation of Ge on Si(001) has been investigated during epitaxial growth modifie...
Research work on the general problem of the nature and thermal stability of the Si/Ge semiconductor ...
Ultrafast high energy electron diffraction in reflection geometry is employed to study the structura...
Many of the challenges in X-ray diffraction arise from the requirement to produce detailed informati...
The application of advanced X-ray techniques, using both laboratory and synchrotron radiation source...
The performance of X-ray imaging detectors based on epitaxial Ge-crystal arrays grown on patterned S...