Add to ORKGReal-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of < 500 µs and surface composition determination in GexSi1 – x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4.5 core loss
Energy-dispersive X-ray spectrometry (EDXS) in the transmission electron microscope (TEM) is applied...
Time‐resolved x‐ray scattering studies of epitaxial overlayers are presented. The results illustrate...
A method of analytical transmission electron microscopy is described that has been successfully appl...
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in m...
Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickne...
Using a conventional reflection high-energy electron diffraction gun together with an electron energ...
Determination of alloy composition during epitaxial growth of GexSi1–x alloys has been demonstrated ...
Photoemission spectroscopy is used to demonstrate that Ge segregates to the first atomic layer of Ge...
abstract: This work is an investigation into the information provided by the concurrent use of in si...
The ability to determine structural and compositional information from the sub-surface region of a s...
SiGe/Si p-channel heteroepitaxial field effect transistor test structures in Si were fabricated by m...
We present a detailed analysis and comparison of four models describing the extension of the electro...
The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge co...
The method of energy loss spectroscopic profiling (ELSP) in a transmission electron microscope is d...
This work presents a study of application of secondary ion mass spectrometry (SIMS) to measure tin c...
Energy-dispersive X-ray spectrometry (EDXS) in the transmission electron microscope (TEM) is applied...
Time‐resolved x‐ray scattering studies of epitaxial overlayers are presented. The results illustrate...
A method of analytical transmission electron microscopy is described that has been successfully appl...
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in m...
Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickne...
Using a conventional reflection high-energy electron diffraction gun together with an electron energ...
Determination of alloy composition during epitaxial growth of GexSi1–x alloys has been demonstrated ...
Photoemission spectroscopy is used to demonstrate that Ge segregates to the first atomic layer of Ge...
abstract: This work is an investigation into the information provided by the concurrent use of in si...
The ability to determine structural and compositional information from the sub-surface region of a s...
SiGe/Si p-channel heteroepitaxial field effect transistor test structures in Si were fabricated by m...
We present a detailed analysis and comparison of four models describing the extension of the electro...
The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge co...
The method of energy loss spectroscopic profiling (ELSP) in a transmission electron microscope is d...
This work presents a study of application of secondary ion mass spectrometry (SIMS) to measure tin c...
Energy-dispersive X-ray spectrometry (EDXS) in the transmission electron microscope (TEM) is applied...
Time‐resolved x‐ray scattering studies of epitaxial overlayers are presented. The results illustrate...
A method of analytical transmission electron microscopy is described that has been successfully appl...