This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW heterostructures by means of photoluminescence (PL) spectroscopy. First, it was demonstrated that the host-substrate may have significant impacts on the optical properties of pure InP NWs, as due to the strain, created by the difference in the LTECs of the NWs and the host-substrate, as due to some other surface effects. Next, the optical properties of such nanowire heterostructures as quantum rod (QRod) and radial quantum well (QWell) NWs were investigated. The features of obtained spectra were explained using theoretical simulation of similar NW heterostructures. The polarization properties of single InP NWs, InAs/InP QWell-NWs, InAs/InP QRod-N...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures ...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
The dissertation is dedicated to the study of InGaAs quantum dots (QDs), rings (QRings), and rods (Q...
International audienceIn recent years, an increasing interest in the use of nanowire heterostructure...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures ...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
The dissertation is dedicated to the study of InGaAs quantum dots (QDs), rings (QRings), and rods (Q...
International audienceIn recent years, an increasing interest in the use of nanowire heterostructure...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...