Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures nanofils InAs/InP épitaxiés sur substrat silicium. Ce travail de thèse a été réalisé principalement dans le cadre du projet ANR «INSCOOP».This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW heterostructures by means of photoluminescence (PL) spectroscopy. First, it was demonstrated that the host-substrate may have significant impacts on the optical properties of pure InP NWs, as due to the strain, created by the difference in the LTECs of the NWs and the host-substrate, as due to some other surface effects. Next, the optical properties of such nanowire heterostructures as quantum rod (QRod) and radi...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for ...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for ...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
We have developed a technique so that both transmission electron microscopy and microphotoluminescen...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for ...
The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire he...