Growth phenomena and characteristics of strained InxGa1-xAs on GaAs
- Pamulapati, Jagadeesh
- Berger, P.
- Chang, K.
- Oh, J. E.
- Chen, Yi
- Singh, Jasprit
- Bhattacharya, Pallab K.
- Gibala, Ronald
Publication date
February 1989
DOI Publisher
Elsevier BV ISSN
0022-0248 Citation count (estimate)
3Abstract
We have investigated the molecular beam epitaxial growth, structural and optical properties of InGaAs on GaAs. We have focused first on the initial stages of growth where the growth is expected to be under coherent strain and second on the nature of single and multiple quantum well heterointerfaces.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/28059/1/0000498.pd
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