Development of ReRAM-based devices for logic- and computation-in-memory applications

Rapid growth of future information technology depends on energy-efficient computation and ultra-high density data storage. Non-volatile redox-based resistive switching memory (ReRAM) devices offer logic-in-memory and cog-nitive computing capabilities and can redefine von Neuman computer architecture. The Complementary Resistive Switch (CRS), where two bipolar switching cells are vertically stacked, is a promising candidate and enables integration of highly dense passive nano-crossbar arrays in 4F^2 structure (with minimum feature size F). Due to the intrinsic non-linearity, the need for selector devices in the array is no longer required. Firstly, Ta2O5-based two-terminal devices (no access to the middle electrode (ME)) are considered, which facilitate simple integration and low fabrication cost. Their electrical characteristics are compared with switching of three-terminal devices (exhibiting access to the ME), in order to investigate the impact of single cell properties on the whole CRS. Initial electroforming process in the three-terminal devices is carried out by applying voltage stimuli to individual ReRAM cells. However, two-terminal devices require introduction of a novel procedure, which enables separate and controlled electroforming for low-current operations (