Complementary resistive switches (CRS), which consist of two anti-serially connected bipolar switching ReRAM cells, can reduce sneak path currents in passive crossbar arrays. However, the high operation current restrains the implementation of the CRS device. In this article, we present low current operation (<300 μA) of vertically stacked, 4F2-compatible Ta2O5-based CRS devices exhibiting two terminals. Two types of devices, either offering a nano- or a micrometer scale bottom cell (BC), are considered. The top cell (TC) in both configurations is designed of micrometer size. A novel three-step electroforming procedure for the vertical CRS device having no access to the middle electrode is exemplified and compared to the conventional forming...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...
Conventional CMOS-technology defined by optical lithography will reach its physical limits within th...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of c...
On the way towards high memory density and computer performance, a considerable development in energ...
We examine the electroforming-dependent multifunctional resistive switching features by operating a ...
Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of th...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
[[abstract]]A new 3-D vertical bipolar junction transistor (BJT) resistive-switching memory (ReRAM) ...
New memory technologies may penetrate the market only if they offer substantial improvements compare...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to a...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...
Conventional CMOS-technology defined by optical lithography will reach its physical limits within th...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of c...
On the way towards high memory density and computer performance, a considerable development in energ...
We examine the electroforming-dependent multifunctional resistive switching features by operating a ...
Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of th...
Rapid growth of future information technology depends on energy-efficient computation and ultra-high...
[[abstract]]A new 3-D vertical bipolar junction transistor (BJT) resistive-switching memory (ReRAM) ...
New memory technologies may penetrate the market only if they offer substantial improvements compare...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to a...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...
Conventional CMOS-technology defined by optical lithography will reach its physical limits within th...
Developing a means by which to compete with commonly used Si-based memory devices represents an impo...