Add to ORKGThe photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires. © OSA 2012
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
© 2016 IEEE.Reliable doping in GaAs nanowires is essential for the development of novel optoelectron...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe t...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
Modulated quasi-steady-state photoluminescence is used in photovoltaics in order to measure the inje...
The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investi...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
© 2016 IEEE.Reliable doping in GaAs nanowires is essential for the development of novel optoelectron...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe t...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
Modulated quasi-steady-state photoluminescence is used in photovoltaics in order to measure the inje...
The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investi...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing...