In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in single GaAs nanowire based circuits, we introduce an on-chip photocurrent pump–probe spectroscopy with a picosecond time resolution. We identify photoinduced thermoelectric, displacement, and carrier lifetime limited currents as well as the transport of photogenerated holes to the electrodes. Moreover, we show that the time-resolved photocurrent spectroscopy can be used to investigate the drift velocity of photogenerated carriers in semiconducting nanowires. Hereby, our results are relevant for nanowire-based optoelectronic and photovoltaic applications
© 2016 IEEE.Reliable doping in GaAs nanowires is essential for the development of novel optoelectron...
AbstractSingle wire devices are generally fabricated to study the electrical and photoelectric behav...
Conductivity and photoconductivity properties of individual GaAs/AlGaAs core–shell nanowires (NWs) a...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by co...
We investigate the ultrafast optoelectronic properties of single Al<sub>0.3</sub>Ga<sub>0.7</sub>As/...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) ...
In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs i...
The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by co...
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic ...
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NW...
Scanning photocurrent microscopy (SPCM) has been widely used as a powerful experimental technique to...
In the present study, we visualize ultrafast carrier dynamics in one-dimensional nanoscale devices, ...
© 2016 IEEE.Reliable doping in GaAs nanowires is essential for the development of novel optoelectron...
AbstractSingle wire devices are generally fabricated to study the electrical and photoelectric behav...
Conductivity and photoconductivity properties of individual GaAs/AlGaAs core–shell nanowires (NWs) a...
In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in sin...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and ...
The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by co...
We investigate the ultrafast optoelectronic properties of single Al<sub>0.3</sub>Ga<sub>0.7</sub>As/...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) ...
In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs i...
The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by co...
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic ...
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NW...
Scanning photocurrent microscopy (SPCM) has been widely used as a powerful experimental technique to...
In the present study, we visualize ultrafast carrier dynamics in one-dimensional nanoscale devices, ...
© 2016 IEEE.Reliable doping in GaAs nanowires is essential for the development of novel optoelectron...
AbstractSingle wire devices are generally fabricated to study the electrical and photoelectric behav...
Conductivity and photoconductivity properties of individual GaAs/AlGaAs core–shell nanowires (NWs) a...