Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
- Jiang, Jize
- Shu, Wei
- Chong, Kwen-Siong
- Lin, Tong
- Lwin, Ne Kyaw Zwa
- Chang, Joseph Sylvester
- Liu, Jingyuan
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.Accepted versio
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