Add to ORKGAbstract—This paper is concerned with the study of the total ionizing dose (TID) effects in NMOS transistors belonging to 90 and 65 nm CMOS technologies from different manufacturers. Results from static and noise measurements are used to collect further evidence for a static and noise degradation model involving charge buildup in shallow trench isolations and lateral parasitic transistor activation. Comparison between two CMOS processes both belonging to the 90 nm node but coming from different foundries makes it possible to shed some light on the process-de-pendent features of the device response to ionizing radiation. Index Terms—Ionizing radiation, nanoscale CMOS, noise, shallow trench isolations. I
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we sho...
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circui...
The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose...
The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm an...
The purpose of this paper is to study the mechanisms underlying performance degradation in 130nm and...
Experimental data provide insight into the mechanisms governing the impact of gate and lateral isola...
Degradation mechanisms associated to lateral isolation oxides are discussed to account for total ion...
Irradiation tests on 90 nm CMOS devices at different total ionizing doses lead to new insights into ...
This paper is focused on the study of the noise performance of 65 nm CMOS transistors at extremely h...
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequen...
Advanced CMOS technologies promise to meet the demanding requirements of mixed-signal integrated cir...
Total ionizing radiation may affect the electrical response of the electronic systems, inducing a va...
The radiation response of 65nm bulk silicon NMOSFETs is investigated,such as core devices and I/O de...
Summarization: High doses of ionizing radiation drastically impair the electrical performance of CMO...
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we sho...
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we sho...
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circui...
The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose...
The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm an...
The purpose of this paper is to study the mechanisms underlying performance degradation in 130nm and...
Experimental data provide insight into the mechanisms governing the impact of gate and lateral isola...
Degradation mechanisms associated to lateral isolation oxides are discussed to account for total ion...
Irradiation tests on 90 nm CMOS devices at different total ionizing doses lead to new insights into ...
This paper is focused on the study of the noise performance of 65 nm CMOS transistors at extremely h...
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequen...
Advanced CMOS technologies promise to meet the demanding requirements of mixed-signal integrated cir...
Total ionizing radiation may affect the electrical response of the electronic systems, inducing a va...
The radiation response of 65nm bulk silicon NMOSFETs is investigated,such as core devices and I/O de...
Summarization: High doses of ionizing radiation drastically impair the electrical performance of CMO...
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we sho...
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we sho...
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circui...
The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose...