The presence of carriers in the grain boundary (GB) space charge is taken into account in solving numerically Poisson's equation. This allows one, by using a schematic description of electron excitation, to investigate the theoretical behaviour of the GB recombination velocity, measured by EBIC, in high injection conditions
In large grained polycrystalline silicon, the recombination activity of grain boundaries (G.B.'s) is...
Two trends can be distinguished in the literature on beam injection methods associated with recombin...
The surface recombination velocity at grain boundaries as well as the intra-grain diffusion length c...
The presence of carriers in the grain boundary (GB) space charge is taken into account in solving nu...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
Key features of the grain boundary recombination in semiconductors derive from the limitation of the...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
The EBIC signal of a grain boundary using only Ohmic contacts on the neighbouring grains is discusse...
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
The grain boundary recombination velocity of polycrystalline Si is separated from bulk effects and i...
A quantitative account of the recombination properties of grain boundaries in undoped and impurity d...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
This paper provides a theoretical investigation of recombination at grain boundaries in both bulk an...
In large grained polycrystalline silicon, the recombination activity of grain boundaries (G.B.'s) is...
Two trends can be distinguished in the literature on beam injection methods associated with recombin...
The surface recombination velocity at grain boundaries as well as the intra-grain diffusion length c...
The presence of carriers in the grain boundary (GB) space charge is taken into account in solving nu...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
Key features of the grain boundary recombination in semiconductors derive from the limitation of the...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
The EBIC signal of a grain boundary using only Ohmic contacts on the neighbouring grains is discusse...
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
The grain boundary recombination velocity of polycrystalline Si is separated from bulk effects and i...
A quantitative account of the recombination properties of grain boundaries in undoped and impurity d...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
This paper provides a theoretical investigation of recombination at grain boundaries in both bulk an...
In large grained polycrystalline silicon, the recombination activity of grain boundaries (G.B.'s) is...
Two trends can be distinguished in the literature on beam injection methods associated with recombin...
The surface recombination velocity at grain boundaries as well as the intra-grain diffusion length c...
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