The interaction of hydrogen ions H+2 with the (110) surface of GaAs prepared by cleavage under ultrahigh vacuum has been studied by photoemission yield spectroscopy and controlled by Auger electron spectroscopy and low energy electron diffraction. The ions, having a kinetic energy lower than 100 eV, were produced by an excitation cell connected to the working chamber by a hole 0.5 mm in diameter and could be deflected onto the sample surface. The interaction of H+2 with GaAs(110) at progressively increasing doses begins with the two successive stages which have been characterized from the interaction of atomic hydrogen with the same substrate : first an adsorption stage during which hydrogen binds covalently to both Ga and As, then a decomp...