Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH:ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices