High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy
A multi-step procedure to decrease the dislocation density in InP wafers is described. The crystal g...
P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injec...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt...
Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped l...
Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czoch...
Compression tests at constant strain rate were performed on $$ oriented single crystals of undoped i...
A new method for the growth of polycrystalline InP at low temperature (500° C) is reported usin...
A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The techn...
An indium phosphide synthesis system by the synthesis, solute diffusion method has been built using ...
Indium Phosphide is a semiconductor which is very useful for applications in the field of micro and ...
Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
$^{111}$In radioactive atoms were implanted into a single crystal of InP. After annealing for lattic...
Fourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Cz...
A multi-step procedure to decrease the dislocation density in InP wafers is described. The crystal g...
P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injec...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt...
Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped l...
Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czoch...
Compression tests at constant strain rate were performed on $$ oriented single crystals of undoped i...
A new method for the growth of polycrystalline InP at low temperature (500° C) is reported usin...
A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The techn...
An indium phosphide synthesis system by the synthesis, solute diffusion method has been built using ...
Indium Phosphide is a semiconductor which is very useful for applications in the field of micro and ...
Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
$^{111}$In radioactive atoms were implanted into a single crystal of InP. After annealing for lattic...
Fourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Cz...
A multi-step procedure to decrease the dislocation density in InP wafers is described. The crystal g...
P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injec...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
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