Cobalt ferrite films were prepared by facing targets sputtering, and then post-annealed at various temperatures (Ta=200-500°C) in air. Their magnetic properties and fine structure were investigated. A coercivity Hc⊥ measured in a perpendicular direction to the film surface of a film deposited at the oxygen gas pressure (Po2) of 0 mTorr and post-annealed at 300°C was 1.5 kOe. The value was 3.5 times greater than a coercivity Hc// measured in a parallel direction to the film surface. This high coercivity ratio Hc⊥/ Hc// showed that this film had the perpendicular magnetic anisotropy. It was investigated by the SEM observation that the perpendicular magnetic anisotropy was mainly caused by the columnar structure of the film. Moreover, the fil...
The present paper reports a complete study on the correlation between structure, morphology, and mag...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...
Cobalt ferrite films were prepared by facing targets sputtering, and then post-annealed at various t...
The composition, microstructure and variation of the perpendicular magnetic properties with temperat...
The sol-gel method has been utilized to prepare cobalt ferrite thin films using coconut water as a s...
Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices...
Using a sol-gel process having the coconut water as a precursor of organic chain, we synthesized thi...
Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is...
Homogeneous, smooth, and partially transparent nanocrystalline thin films of CoFe2O4 were fabricated...
CoFe2O4 films were deposited on Si [(100) or (111)] substrates by pulsed laser deposition, varying s...
Co/CoO nanocomposite thin films have been deposited by RF sputtering with different oxygen partial p...
Co/CoO nanocomposite thin films have been deposited by RF sputtering with different oxygen partial p...
The effects of the annealing temperature and the molar ratio of [Co2+]/[Fe3+] were studied. Sol-gel ...
10.1016/j.jmmm.2006.11.142Journal of Magnetism and Magnetic Materials3102 SUPPL. PART 32537-2539JMMM
The present paper reports a complete study on the correlation between structure, morphology, and mag...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...
Cobalt ferrite films were prepared by facing targets sputtering, and then post-annealed at various t...
The composition, microstructure and variation of the perpendicular magnetic properties with temperat...
The sol-gel method has been utilized to prepare cobalt ferrite thin films using coconut water as a s...
Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices...
Using a sol-gel process having the coconut water as a precursor of organic chain, we synthesized thi...
Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is...
Homogeneous, smooth, and partially transparent nanocrystalline thin films of CoFe2O4 were fabricated...
CoFe2O4 films were deposited on Si [(100) or (111)] substrates by pulsed laser deposition, varying s...
Co/CoO nanocomposite thin films have been deposited by RF sputtering with different oxygen partial p...
Co/CoO nanocomposite thin films have been deposited by RF sputtering with different oxygen partial p...
The effects of the annealing temperature and the molar ratio of [Co2+]/[Fe3+] were studied. Sol-gel ...
10.1016/j.jmmm.2006.11.142Journal of Magnetism and Magnetic Materials3102 SUPPL. PART 32537-2539JMMM
The present paper reports a complete study on the correlation between structure, morphology, and mag...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...
The field of magnetic storage is in constant progress to constantly push further the storage capacit...