The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap are studied. The feasibility of lasing in these materials in the range of 1.5–3 µm is estimated
AbstractZnSe and ZnS are the prototype II–VI semiconductors and their cubic phase, which occurs natu...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modula...
The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor material...
The spectroscopic properties of Cr{sup 2+}, Co{sup 2+}, and Ni{sup 2+}-doped single crystals of ZnS,...
Fundamental principles of transition metal ion spectroscopy, semiconductor host materials, transitio...
Tunable infrared laser light may serve as a useful means by which to detect the presence of the targ...
This work is devoted to evaluating new laser systems based upon chromium and iron doped ZnSe structu...
A new class of room-temperature, diode-pumped solid state lasers, that are broadly tunable in the mi...
The optical properties of wide bandgap 11-VI semiconductors are governed by excitons, bound electron...
Optical-absorption and emission measurements of doubly ionized iron in CdTe, ZnTe, ZnSe and ZnS have...
Abstract — Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr2+:ZnSe...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
AbstractZnSe and ZnS are the prototype II–VI semiconductors and their cubic phase, which occurs natu...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modula...
The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor material...
The spectroscopic properties of Cr{sup 2+}, Co{sup 2+}, and Ni{sup 2+}-doped single crystals of ZnS,...
Fundamental principles of transition metal ion spectroscopy, semiconductor host materials, transitio...
Tunable infrared laser light may serve as a useful means by which to detect the presence of the targ...
This work is devoted to evaluating new laser systems based upon chromium and iron doped ZnSe structu...
A new class of room-temperature, diode-pumped solid state lasers, that are broadly tunable in the mi...
The optical properties of wide bandgap 11-VI semiconductors are governed by excitons, bound electron...
Optical-absorption and emission measurements of doubly ionized iron in CdTe, ZnTe, ZnSe and ZnS have...
Abstract — Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr2+:ZnSe...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
AbstractZnSe and ZnS are the prototype II–VI semiconductors and their cubic phase, which occurs natu...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modula...
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