Add to ORKGBased on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, this review discusses the main properties of III-V, IV-VI, and II-VI narrow-band compounds and solid solutions, as well as the properties of doped germanium and silicon. The use of these materials in IR sources and detectors is considered, along with their use as optical media for optoelectronic devices (filters, modulators, elements for integrated optics and gradient optics, etc.). © 1996 The Optical Society of America
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical data c...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
This thesis investigates novel range semiconductor materials and structures for use in optoelectroni...
This thesis investigates novel range semiconductor materials and structures for use in optoelectroni...
Kolodzey, JamesInterest in near and mid-infrared optoelectronic devices for sensing, security, medic...
Infrared (IR) detectors are very important in both military and civilian applications and have been ...
Due to their good photonic and electronic properties, silicon and germanium have been intensively re...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Next generation optical and opto-electronic components will require materials that possess unique, s...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Next generation optical and opto-electronic components will require materials that possess unique, s...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical data c...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, thi...
This thesis investigates novel range semiconductor materials and structures for use in optoelectroni...
This thesis investigates novel range semiconductor materials and structures for use in optoelectroni...
Kolodzey, JamesInterest in near and mid-infrared optoelectronic devices for sensing, security, medic...
Infrared (IR) detectors are very important in both military and civilian applications and have been ...
Due to their good photonic and electronic properties, silicon and germanium have been intensively re...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Next generation optical and opto-electronic components will require materials that possess unique, s...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Next generation optical and opto-electronic components will require materials that possess unique, s...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical data c...